Defects in TiN films probed by monoenergetic positron beams

被引:0
|
作者
机构
[1] Uedono, Akira
[2] Nanao, Susumu
[3] Tanigawa, Shoichiro
[4] Suzuki, Ryoichi
[5] Ohdaira, Toshiyuki
[6] Mikado, Tomohisa
[7] Ishibashi, Shoji
来源
Uedono, Akira | 1600年 / JJAP, Minato-ku, Japan卷 / 34期
关键词
29;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] DEFECTS IN SIO2/SI STRUCTURES PROBED BY USING A MONOENERGETIC POSITRON BEAM
    UEDONO, A
    WEI, L
    TANIGAWA, S
    OHJI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (6A): : 3330 - 3334
  • [42] Vacancy-type defects in strained-Si layers deposited on SiGe/Si structures probed by using monoenergetic positron beams
    Uedono, A
    Hattori, N
    Naruoka, H
    Ishibashi, S
    Suzuki, R
    Ohdaira, T
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (02)
  • [43] Monoenergetic positron beams: Production and experiments
    Amarendra, G
    Rao, GV
    Viswanathan, B
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1996, 34 (09) : 718 - 726
  • [44] Defects in Eu- and Tb-doped GaN probed using a monoenergetic positron beam
    Uedono, A
    Bang, H
    Horibe, K
    Morishima, S
    Akimoto, K
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) : 5181 - 5184
  • [45] Defects in ion-implanted 3C-SiC probed by a monoenergetic positron beam
    Uedono, A
    Itoh, H
    Ohshima, T
    Aoki, Y
    Yoshikawa, M
    Nashiyama, I
    Okumura, H
    Yoshida, S
    Moriya, T
    Kawano, T
    Tanigawa, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (12A): : 5986 - 5990
  • [46] Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam
    Uedono, Akira
    Kimura, Yasuki
    Hoshii, Takuya
    Kakushima, Kuniyuki
    Sumiya, Masatomo
    Tsukui, Masayuki
    Miyano, Kiyotaka
    Mizushima, Ichiro
    Yoda, Takashi
    Tsutsui, Kazuo
    JOURNAL OF APPLIED PHYSICS, 2023, 133 (22)
  • [47] Vacancy-type defects in Mg-implanted GaN probed by a monoenergetic positron beam
    Uedono, Akira
    Takashima, Shinya
    Edo, Masaharu
    Ueno, Katsunori
    Matsuyama, Hideaki
    Kudo, Hiroshi
    Naramoto, Hiroshi
    Ishibashi, Shoji
    2016 16th International Workshop on Junction Technology (IWJT), 2016, : 35 - 38
  • [48] Defects in ion-implanted 3C-SiC probed by a monoenergetic positron beam
    Uedono, Akira
    Itoh, Hisayoshi
    Ohshima, Takeshi
    Aoki, Yasushi
    Yoshikawa, Masahito
    Nashiyama, Isamu
    Okumura, Hajime
    Yoshida, Sadafumi
    Moriya, Tsuyoshi
    Kawano, Takao
    Tanigawa, Shoichiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (12 A): : 5986 - 5990
  • [49] Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams
    Uedono, Akira
    Yamada, Takahiro
    Hosoi, Takuji
    Egger, Werner
    Koschine, Toenjes
    Hugenschmidt, Christoph
    Dickmann, Marcel
    Watanabe, Heiji
    APPLIED PHYSICS LETTERS, 2018, 112 (18)
  • [50] Nanoporous structure of methyl-silsesquioxane films using monoenergetic positron beams
    Uedono, A
    Chen, ZQ
    Suzuki, R
    Ohdaira, T
    Mikado, T
    Fukui, S
    Shiota, A
    Kimura, S
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) : 2498 - 2503