Nanoporous structure of methyl-silsesquioxane films using monoenergetic positron beams

被引:35
|
作者
Uedono, A [1 ]
Chen, ZQ
Suzuki, R
Ohdaira, T
Mikado, T
Fukui, S
Shiota, A
Kimura, S
机构
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[2] Natl Inst Adv Ind & Technol, Tsukuba, Ibaraki 3058568, Japan
[3] JSR Corp, Tsukuba Res Lab, Tsukuba, Ibaraki 3050841, Japan
关键词
D O I
10.1063/1.1388858
中图分类号
O59 [应用物理学];
学科分类号
摘要
The size and depth distributions of pores in silica-based intermetal-dielectric materials were studied using monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons were measured for methyl-silsesquioxane (MSSQ) spin-on-glass films. The size distribution of pores in the MSSQ films fabricated with 8% porogen load was found to be bimodal, with the major peaks located at 3 and 8 nm(3). Increasing the porogen load from 8% to 40% caused the smaller pores (3 nm(3)) to disappear and 30-nm(3) ones to appear; these pores were considered to be interconnected, and this structure makes it possible for positronium (Ps) atoms to find paths towards the surface and to escape into vacuum. The 8%-porogen MSSQ films had low porosity near the Si substrate. From measurements of the temperature dependence of the self-annihilation rate of ortho-Ps, we discuss the relationship between o-Ps emission into vacuum and the pore structure. (C) 2001 American Institute of Physics.
引用
收藏
页码:2498 / 2503
页数:6
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