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- [7] DEFECTS IN HEAVILY PHOSPHORUS-DOPED SI EPITAXIAL-FILMS PROBED BY MONOENERGETIC POSITRON BEAMS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (11): : 6286 - 6290
- [8] Oxygen-related defects in silicon-on-insulator wafers probed monoenergetic positron beams 2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2002, : 196 - 197
- [10] Vacancy-type defects in ion-implanted diamonds probed by monoenergetic positron beams Uedono, Akira, 1772, JJAP, Minato-ku (34):