DEFECTS INTRODUCED BY AR PLASMA EXPOSURE IN GAAS PROBED BY MONOENERGETIC POSITRON BEAM

被引：9
|
作者：
UEDONO, A
KAWANO, T
TANIGAWA, S
WADA, K
NAKANISHI, H
机构：
[1] UNIV TSUKUBA, CTR RADIOISOTOPE, TSUKUBA, IBARAKI 305, JAPAN
[2] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 10A期
关键词：
POSITRON ANNIHILATION; GAAS; DEFECT; VACANCY; INTERSTITIAL; PLASMA; DRY ETCHING;
D O I：
10.1143/JJAP.33.L1374
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ar-plasma-induced defects in n-type GaAs were probed by a monoenergetic positron beam. The depth distribution of the defects was obtained from measurements of Doppler broadening profiles of the annihilation radiation as a function of incident positron energy. The damaged layer induced by the exposure was found to extend far beyond the stopping range of Ar ions, and the dominant defects were identified as interstitial-type defects. After 100-degrees-C annealing, such defects were annealed. Instead, vacancy-type defects were found to be the dominant defects in the subsurface region.
引用
收藏
页码：L1374 / L1377
页数：4
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