DEFECTS INTRODUCED BY AR PLASMA EXPOSURE IN GAAS PROBED BY MONOENERGETIC POSITRON BEAM

被引：9

作者：

UEDONO, A

KAWANO, T

TANIGAWA, S

WADA, K

NAKANISHI, H

机构：

[1] UNIV TSUKUBA, CTR RADIOISOTOPE, TSUKUBA, IBARAKI 305, JAPAN

[2] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 10A期

关键词：

POSITRON ANNIHILATION; GAAS; DEFECT; VACANCY; INTERSTITIAL; PLASMA; DRY ETCHING;

D O I：

10.1143/JJAP.33.L1374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ar-plasma-induced defects in n-type GaAs were probed by a monoenergetic positron beam. The depth distribution of the defects was obtained from measurements of Doppler broadening profiles of the annihilation radiation as a function of incident positron energy. The damaged layer induced by the exposure was found to extend far beyond the stopping range of Ar ions, and the dominant defects were identified as interstitial-type defects. After 100-degrees-C annealing, such defects were annealed. Instead, vacancy-type defects were found to be the dominant defects in the subsurface region.

引用

页码：L1374 / L1377

页数：4

共 50 条

[21] EFFECTS OF THE FERMI LEVEL ON DEFECTS IN BE+-IMPLANTED GAAS STUDIED BY A MONOENERGETIC POSITRON BEAM
UEDONO, A
WEI, L
TABUKI, Y
KONDO, H
TANIGAWA, S
WADA, K
NAKANISHI, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12A): : L2002 - L2005
[22] Effects of the fermi level on defects in Be+-implanted GaAs studied by a monoenergetic positron beam
Uedono, Akira, 1600, (30):
[23] Defects in ZnO thin films grown on ScAlMgO4 substrates probed by a monoenergetic positron beam
Uedono, A
Koida, T
Tsukazaki, A
Kawasaki, M
Chen, ZQ
Chichibu, S
Koinuma, H
JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) : 2481 - 2485
[24] Oxygen-related defects introduced by As+-implantation through cap layers in Si probed by monoenergetic positron beams
Uedono, A
Muramatsu, M
Ubukata, T
Tanino, H
Tanigawa, S
Nakano, A
Yamamoto, H
Suzuki, R
Ohdaira, T
Mikado, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (11): : 6126 - 6129
[25] Oxygen-related defects introduced by As+-implantation through cap layers in Si probed by monoenergetic positron beams
Uedono, Akira
Muramatsu, Makoto
Ubukata, Tomohiro
Tanino, Hirotoshi
Tanigawa, Shoichiro
Nakano, Akihiko
Yamamoto, Hidekazu
Suzuki, Ryoichi
Ohdaira, Toshiyuki
Mikado, Tomohisa
1600, JJAP, Tokyo (39):
[26] CHARACTERIZATION OF METAL/GAAS INTERFACES BY MONOENERGETIC POSITRON BEAM
UEDONO, A
FUJII, S
MORIYA, T
KAWANO, T
TANIGAWA, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (10): : 5505 - 5509
[27] DEFECTS IN SEPARATION BY IMPLANTED OXYGEN WAFER PROBED BY MONOENERGETIC POSITRON BEAMS
UEDONO, A
WATAUCHI, S
UJIHIRA, Y
WEI, L
TANIGAWA, S
SUZUKI, R
OHGAKI, H
MIKADO, T
KAMETANI, H
AKIYAMA, H
YAMAGUCHI, Y
KOUMARU, M
HYPERFINE INTERACTIONS, 1993, 79 (1-4): : 621 - 625
[28] Point defects in thin HfAIOx films probed by monoenergetic positron beams
Uedono, A
Mitsuhashi, R
Horiuchi, A
Torii, K
Yamabe, K
Yamada, K
Suzuki, R
Ohdaira, T
Mikado, T
FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES, 2004, 786 : 43 - 48
[29] Vacancy-type defects in InxGa1-xN alloys probed using a monoenergetic positron beam
Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
不详
不详
不详
J Appl Phys, 2012, 1
[30] Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam
Uedono, Akira
Siladie, Alexandra-Madalina
Pernot, Julien
Daudin, Bruno
Ishibashi, Shoji
JOURNAL OF APPLIED PHYSICS, 2019, 125 (17)

← 1 2 3 4 5 →