Interaction of non-equilibrium electrons with phonons in bulk GaN and GaN/AlGaN quantum wells

The analytical theory of non-equilibrium electrons interacting with deformation acoustic, piezoacoustic and polar optical phonons in GaN-based quantum wells and bulk GaN is developed taking into account multi-subband population. The new distribution functions thus obtained are used for the calculation of the electric field dependence of the electron mobility and the average electron kinetic energy. The theory provides a self-consistent transition from the two-dimensional to the three-dimensional regimes of electron transport in quantum wells with increasing external electric field.