Free carrier mobility in AlGaN/GaN quantum wells

被引：5
|
作者：
Farvacque, JL [1 ]
Bougrioua, Z
Carosella, F
Moerman, I
机构：
[1] Univ Sci & Tech Lille, CNRS, ESA 8008, Lab Struct & Proprietes Etat Solide, F-59655 Villeneuve Dascq, France
[2] CNRS, CHREA, F-06560 Valbonne, France
[3] State Univ Ghent, IMEC VZW, INTEC, B-9000 Ghent, Belgium
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2002年 / 14卷 / 48期
关键词：
D O I：
10.1088/0953-8984/14/48/384
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Experimental results show that the free carrier mobility in AlGaN/GaN quantum wells strongly decreases with the carrier density. Using the dynamical theory, we show that this behaviour can be explained by a combination of phonon, carrier-carrier and interface defect scattering mechanisms.
引用
收藏
页码：13319 / 13328
页数：10
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