Competition between quantum-confined Stark effect and free-carrier screening effect in AlGaN/GaN multiple quantum wells

被引：2
|
作者：
Fujita, T. [1 ]
Toizumi, T. [1 ]
Nakazato, Y. [1 ]
Tackeuchi, A. [1 ]
Chinone, T. [2 ]
Liang, J. H. [2 ]
Kajikawa, M. [2 ]
机构：
[1] Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan
[2] Stanley Elect Co Ltd, Yokohama, Kanagawa 2250014, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1 | 2008年 / 5卷 / 01期
关键词：
D O I：
10.1002/pssc.200776584
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The competition between the quantum-confined Stark effect (QCSE) and the free-carrier screening effect in AlGaN/GaN multiple quantum wells (MQWs) has been investigated by time-resolved photoluminescence (PL) measurement. AlGaN/GaN MQWs is a promising material for the next-generation ultraviolet light-emitting diodes and laser devices. The large charges in the PL energy and the decay time are observed with changing carrier density. We show that the energy shift and the change in decay time are explained well by the free-carrier screening effect that compensates for the internal electric field. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：356 / +
页数：2
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