Interaction of non-equilibrium electrons with phonons in bulk GaN and GaN/AlGaN quantum wells

被引：0

作者：

Zakhleniuk, N.A. ^{[1
]}

Bennett, C.R. ^{[1
]}

Ridley, B.K. ^{[1
]}

Babiker, M. ^{[1
]}

机构：

[1] Department of Physics, University of Essex, Wivenhoe Park, Colchester CO4 3SQ, United Kingdom

来源：

Physica B: Condensed Matter | 1999年 / 263卷

关键词：

Carrier mobility - Electric field effects - Electron transitions - Electron transport properties - Hot carriers - Kinetic energy - Nitrides - Phonons - Semiconducting aluminum compounds - Semiconducting gallium compounds;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The analytical theory of non-equilibrium electrons interacting with deformation acoustic, piezoacoustic and polar optical phonons in GaN-based quantum wells and bulk GaN is developed taking into account multi-subband population. The new distribution functions thus obtained are used for the calculation of the electric field dependence of the electron mobility and the average electron kinetic energy. The theory provides a self-consistent transition from the two-dimensional to the three-dimensional regimes of electron transport in quantum wells with increasing external electric field.

引用

页码：549 / 552

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