Model for electromigration failure distributions of contacts and vias in advanced IC technologies

被引：0
|
作者：
Lucent Technologies, Orlando, United States [1 ]
机构：
来源：
Int Conf Solid State Integr Circuit Technol Proc | / 234-237期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
12
引用
收藏
相关论文
共 50 条
  • [21] A study of bimodal distributions of time-to-failure of copper via electromigration
    Lai, JB
    Yang, JL
    Wang, YP
    Chang, SH
    Hwang, RL
    Huang, YS
    Hou, CS
    2001 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERS, 2001, : 271 - 274
  • [22] Modeling of failure time distributions for interconnects due to stress voiding and electromigration
    Wolfer, WG
    Bartelt, MC
    Dike, JJ
    Hoyt, JJ
    Gleixner, RJ
    Nix, WD
    MATERIALS RELIABILITY IN MICROELECTRONICS VIII, 1998, 516 : 147 - 158
  • [23] Simulation of electromigration failure by variable resistance model
    Hong Kong Polytechnic Univ, Kowloon, Hong Kong
    Modell Simul Mater Sci Eng, 6 (563-577):
  • [24] Simulation of electromigration failure by variable resistance model
    Li, VC
    Dam, XT
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 1997, 5 (06) : 563 - 577
  • [25] MODEL OF ELECTROMIGRATION FAILURE UNDER PULSED CONDITION
    SCHOEN, JM
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 508 - 512
  • [26] Compact Model for Solder Bump Electromigration Failure
    Ceric, H.
    Selberherr, S.
    2015 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND 2015 IEEE MATERIALS FOR ADVANCED METALLIZATION CONFERENCE (IITC/MAM), 2015, : 159 - 161
  • [27] Substrate majority carrier-induced NLDMOSFET failure and its prevention in advanced Smart Power IC technologies
    Zhu, Ronghua
    Khemka, Vishnu
    Bose, Amitava
    Roggnbauer, Todd
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2006, 6 (03) : 386 - 392
  • [28] Joule heating enhanced electromigration failure in redistribution layer in 2.5D IC
    Liu, Yingxia
    Li, Menglu
    Jiang, Mengjie
    Tu, K. N.
    Kim, Dong Wook
    Gu, Sam
    2016 IEEE 66TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2016, : 1359 - 1363
  • [29] Power cycling simulation of an IC package: Considering electromigration and thermal-mechanical failure
    Yong, L
    Irving, S
    53RD ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, 2003 PROCEEDINGS, 2003, : 415 - 421
  • [30] CONTACT-ELECTROMIGRATION-INDUCED LEAKAGE FAILURE IN ALUMINUM-SILICON TO SILICON CONTACTS
    CHERN, JGJ
    OLDHAM, WG
    CHEUNG, N
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) : 1341 - 1346
12345