CONTACT-ELECTROMIGRATION-INDUCED LEAKAGE FAILURE IN ALUMINUM-SILICON TO SILICON CONTACTS

被引：8
|
作者：
CHERN, JGJ
OLDHAM, WG
CHEUNG, N
机构：
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 07期
关键词：
D O I：
10.1109/T-ED.1985.22121
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1341 / 1346
页数：6
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