Modeling of failure time distributions for interconnects due to stress voiding and electromigration

被引：2
|
作者：
Wolfer, WG [1 ]
Bartelt, MC [1 ]
Dike, JJ [1 ]
Hoyt, JJ [1 ]
Gleixner, RJ [1 ]
Nix, WD [1 ]
机构：
[1] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
来源：
MATERIALS RELIABILITY IN MICROELECTRONICS VIII | 1998年 / 516卷
关键词：
D O I：
10.1557/PROC-516-147
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A status report is given on a comprehensive modeling project aimed at predicting failure time distributions of interconnect lines. We discuss our novel approach to calculate the evolution of stresses in lines using elastic response functions. It is argued that this approach makes it possible to model the stress and damage evolution in a large ensemble of lines efficiently so that statistically meaningful failure time distributions can be generated. The elastic response functions enable us also to derive a generalized Korhonen equation which includes the effects of mass transport at remote locations. Basic features of this equation are demonstrated with a one-dimensional implementation and its results are compared with the classical Korhonen [8, 9, 10] model.
引用
收藏
页码：147 / 158
页数：12
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