InGaAsP/InP HETERO JUNCTION BIPOLAR TRANSISTOR WITH HIGH CURRENT GAIN.

被引：0

作者：

Fukano, Hideki ^{[1
]}

Itaya, Yoshio ^{[1
]}

Motosugi, George ^{[1
]}

机构：

[1] NTT, Atsugi, Jpn, NTT, Atsugi, Jpn

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1986年 / 25卷 / 06期

关键词：

SEMICONDUCTING INDIUM COMPOUNDS - Applications;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

N-InP emitter, p-InGaAsP base and n-InGaAsP collector hetero junction bipolar transistors (HBT's) were fabricated. It has been show that a maximum current gain of more than 10,000 is obtained with a base carrier concentration of 5 multiplied by 10**1**7 cm** minus **3 and a 0. 15 mu m base width. The current gain decreases notably as the base carrier concentration increases. This behavior is explained by the decrease in emitter efficiency caused by the increase in recombination-gneration current in the emitter-base depletion region.

引用

页码：504 / 506

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