InGaAsP/InP HETERO JUNCTION BIPOLAR TRANSISTOR WITH HIGH CURRENT GAIN.

被引：0
|
作者：
Fukano, Hideki [1 ]
Itaya, Yoshio [1 ]
Motosugi, George [1 ]
机构：
[1] NTT, Atsugi, Jpn, NTT, Atsugi, Jpn
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1986年 / 25卷 / 06期
关键词：
SEMICONDUCTING INDIUM COMPOUNDS - Applications;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
N-InP emitter, p-InGaAsP base and n-InGaAsP collector hetero junction bipolar transistors (HBT's) were fabricated. It has been show that a maximum current gain of more than 10,000 is obtained with a base carrier concentration of 5 multiplied by 10**1**7 cm** minus **3 and a 0. 15 mu m base width. The current gain decreases notably as the base carrier concentration increases. This behavior is explained by the decrease in emitter efficiency caused by the increase in recombination-gneration current in the emitter-base depletion region.
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页码：504 / 506
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