The current gain of bipolar transistor in the IGBT measurement

被引：0

作者：

Parnklang, J ^{[1
]}

Niemcharoen, S ^{[1
]}

Yardsamer, S ^{[1
]}

机构：

[1] King Mongkuts Inst Technol Ladkrabang, Fac Engn, Bangkok 10520, Thailand

来源：

IEEE 2000 TENCON PROCEEDINGS, VOLS I-III: INTELLIGENT SYSTEMS AND TECHNOLOGIES FOR THE NEW MILLENNIUM | 2000年

关键词：

modeling of power devices;

D O I：

暂无

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

The common emitter current gain (beta (o)) of the bipolar transistor in the IGBT (Insulated Gate Bipolar Transistor) structure semiconductor device is measured in this paper. The first step of the measurement is to find the Early voltage (VA) Of the device. Then the Early voltage is used for calculating the base width (W-B) and the doping density in the base (NB) Of the device. Finally, we can use those parameters to calculate the common emitter current gain. The junction capacitance of the collector and the emitter are also measured to find the doping concentration in the emitter. All of the parameters are used for calculating the middle frequency common emitter current gain (beta (o)) The experimental results show that errors of the measurement current gain are not more than 5%.

引用

页码：445 / 448

页数：4

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