HIGH-CURRENT GAIN GAINAS INP HOT-ELECTRON TRANSISTOR

被引：9
|
作者：
YAMAURA, S
MIYAMOTO, Y
FURUYA, K
机构：
[1] Department of Electric and Electronics Engineering, Tokyo Institute of Technology, Tokyo, 2-12-1 Meguro-ku, O-okayama
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 14期
关键词：
Semiconductor devices and materials; Transistors;
D O I：
10.1049/el:19900683
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The highest current gain (more than 100 at 77 K) is reported in GalnAs/lnP hot electron transistor (HET) grown by organo-metallic vapour-phase epitaxy. This result shows the promise of the GalnAs/lnP material system for ballistic electron devices. A sudden increase of the collector current in the common-emitter characteristics was observed, which would have been caused by the quantum-interference effect. © 1990, The Institution of Electrical Engineers. All rights reserved.
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收藏
页码：1055 / 1056
页数：2
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