HIGH-CURRENT GAIN IN MONOLITHIC HOT-ELECTRON TRANSISTORS

被引：10
|
作者：
SHANNON, JM
GILL, A
机构：
来源：
ELECTRONICS LETTERS | 1981年 / 17卷 / 17期
关键词：
D O I：
10.1049/el:19810435
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：620 / 621
页数：2
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