TRANSPORT OF ELECTRONS IN MONOLITHIC HOT-ELECTRON SI TRANSISTORS

被引：3

作者：

BERZ, F

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(86)90126-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1213 / 1222

页数：10

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[1] CALCULATED PERFORMANCE OF MONOLITHIC HOT-ELECTRON TRANSISTORS
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[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (04): : 134 - 140
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[3] TRANSPORT IN SILICON MONOLITHIC HOT-ELECTRON STRUCTURES
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[J]. THIN SOLID FILMS, 1982, 89 (01) : 21 - 26
[5] THEORY OF CURRENT TRANSPORT IN HOT-ELECTRON TRANSISTORS
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[10] MONOLITHIC HOT-ELECTRON TRANSISTORS IN GAAS WITH HIGH-CURRENT GAIN
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