DLTS STUDY OF ELECTRON TRAPS IN n-GaAs GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY USING TRIETHYLGALLIUM AND AsH3.

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作者：
Kanamoto, Kyozo [1 ]
Kimura, Kozo [1 ]
Horiguchi, Seishi [1 ]
Mihara, Minoru [1 ]
Ishii, Makoto [1 ]
机构：
[1] Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn
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| 1600年 / 26期
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