LOW-TEMPERATURE GAAS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：5
|
作者：
DROOPAD, R
SHIRALAGI, KT
PUECHNER, RA
CHOI, KY
MARACAS, GN
机构：
[1] Center for Solid State Electronics Research, Arizona State University, Tempe
来源：
JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0022-0248(92)90391-U
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Low temperature growth of GaAs by gas source molecular beam epitaxy (GSMBE) is investigated. Reflection high energy electron diffraction is used to monitor the low temperature buffer (LTB) growth and anneal conditions. Growth at low temperatures with dimeric arsenic is more sensitive to the V/III flux ratios and substrate temperatures than with AS4 used in solid source MBE. Temperature dependent conductivity and deep level transient spectroscopy measurements are presented to observe trap outdiffusion from the LTB into subsequently grown FET channels. Low temperature photoluminescence spectra show degradation of quantum well properties when LTBs are grown with increasing V/III flux ratios.
引用
收藏
页码：200 / 205
页数：6
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