共 50 条
- [1] GROWTH OF INGAP ON GAAS USING GAS-SOURCE MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 358 - 360
- [3] ELECTRONIC AND OPTICAL CHARACTERIZATION OF INGAP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 966 - 968
- [7] CHARACTERIZATION OF HIGH-QUALITY GAINP/GAAS SUPERLATTICES GROWN ON GAAS AND SI SUBSTRATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1113 - 1115