ELECTRON TRAPS IN INGAP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：17
|
作者：
KIM, HS
HAFICH, MJ
PATRIZI, GA
NANDA, A
VOGT, TJ
WOODS, LM
ROBINSON, GY
机构：
[1] GYEONGSANG NATL UNIV,DEPT PHYS,CHINJU,SOUTH KOREA
[2] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 02期
关键词：
D O I：
10.1063/1.355330
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Deep-level transient spectroscopy has been used to characterize n-type In0.48Ga0.52P grown by gas-source molecular beam epitaxy. Only one electron trap was detected in both unintentionally doped and Si-doped material, with the thermal emission energy barrier varying somewhat with measurement conditions. For a bias pulse duration of 10 ms, the emission barrier energy was 0.24+/-0.03 eV and the capture barrier energy was 0.06+/-0.02 eV. The trap concentration was less than 3 X 10(14) cm-3 and was found to be independent of Si doping for concentrations up to 4 X 10(18) cm-3 and to oxygen contamination in the range (0.5-1.5) X 10(18) cm-3.
引用
收藏
页码：1431 / 1433
页数：3
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