PHOTOLUMINESCENCE LIFETIME OF GAP/AIP SUPERLATTICES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：7
|
作者：
ASAMI, K
ASAHI, H
KIM, SG
KIM, JH
ISHIDA, A
TAKAMUKU, S
GONDA, S
机构：
[1] Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 18期
关键词：
D O I：
10.1063/1.111590
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The photoluminescence lifetimes of GaP/AlP short-period superlattices (GaP)11/(AlP)3 and (GaP)9/(AlP)5, grown on GaP(001) by gas-source molecular-beam epitaxy are studied by a time-correlated single photon counting method at 4.2 and 298 K. Two components of the photoluminescence lifetime are found for each sample. The fast component is about 2 ns accompanied by a slow component of about 20 ns. Discussion of the possible explanations of the two components includes the co-existence of direct- and indirect-band-gap transitions in the superlattice, which was fabricated from the indirect-band-gap constituents.
引用
收藏
页码：2430 / 2432
页数：3
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