Studies of InAs/GaAs quantum dot laser grown by gas source molecular beam epitaxy

We reported on growth conditions of InAs/GaAs quantum dots laser grown by gas source molecular beam epitaxy. It was found that the uniformity and size of dots had a close collection with growth temperature and thicknesses of InAs layer. As the increase of growth temperature, the emission wavelength kept red shift and line width of emission spectra also increased. Good uniformity of QD could be easily obtained with a relative lower growth temperature of 425 °C. At a higher growth temperature of 500 °C, a wider tunable region of 129.9 nm was observed by adjusting the thicknesses of InAs layers. Comparison with a normal capping process, the growth interruption of capping materials would not lead to the formed dots collapse. An available growth temperature of 425 °C was obtained to achieve good performances of InAs/GaAs quantum dot laser, which had one facet power more than 103 mW under continuous wave mode.