Quantum dot lasers grown by gas source molecular-beam epitaxy

被引：5

作者：

Gong, Q. ^{[1
]}

Chen, P. ^{[1
]}

Li, S. G. ^{[1
]}

Lao, Y. F. ^{[1
]}

Cao, C. F. ^{[1
]}

Xu, C. F. ^{[1
]}

Zhang, Y. G. ^{[1
]}

Feng, S. L. ^{[1
]}

Ma, C. H. ^{[2
]}

Wang, H. L. ^{[2
]}

机构：

[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[2] Qufu Normal Univ, Coll Phys & Engn, Qufu 273165, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期

关键词：

Quantum dot lasers; Gas source molecular-beam epitaxy; InAs; InP; GaAs; Semiconductor lasers; ROOM-TEMPERATURE OPERATION; NM;

D O I：

10.1016/j.jcrysgro.2010.12.014

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the InAs quantum dot lasers grown by gas source molecular-beam epitaxy, respectively, on GaAs and InP substrates. Room temperature continuous-wave operation was achieved for both InAs/GaAs and InAs/InP quantum dot lasers, respectively, at 1.10 mu m and 1.54-1.70 mu m wavelength region. More than 50 mW optical power was collected from one facet of the InAs/GaAs quantum dot lasers at 20 degrees C, while for InAs/InP quantum dot lasers the maximum output power was measured as 30 mW. For InAs/InP material system, by increasing the layer thickness of deposited InAs from 3.0 to 3.5 monolayers, the lasing wavelength can be extended from 1.5-1.6 mu m to 1.6-1.7 mu m. Moreover, a tunable quantum dot external cavity laser was demonstrated, utilizing the broad gain profile of InAs quantum dots. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：450 / 453

页数：4

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