SOLID-PHASE EPITAXIAL GROWTH OF POLYCRYSTALLINE SILICON FILMS AMORPHIZED BY ION IMPLANTATION.

被引：0
|
作者：
Quach, N.T. [1 ]
Reif, R. [1 ]
机构：
[1] MIT, Dep of Electrical Engineering, & Computer Science, Cambridge,, MA, USA, MIT, Dep of Electrical Engineering & Computer Science, Cambridge, MA, USA
来源：
| 1600年 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTING SILICON
引用
收藏
相关论文
共 50 条
  • [21] Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon
    Rudawski, N. G.
    Jones, K. S.
    Gwilliam, R.
    MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2008, 61 (1-6): : 40 - 58
  • [22] Solid-phase epitaxial growth of Ge-Si alloys made by ion implantation
    1600, (71):
  • [23] Phosphorous and boron doping effects on solid phase recrystallization of polycrystalline silicon films amorphized by germanium ion implantation (vol 15, pg 343, 1996)
    Kang, MK
    Yamamoto, T
    Matsui, T
    Kuwano, H
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1996, 15 (19) : 1740 - 1740
  • [24] Solid-phase epitaxial regrowth of fine-grain polycrystalline silicon
    Sinke, W.
    Saris, F. W.
    Barbour, J. C.
    Mayer, J. W.
    JOURNAL OF MATERIALS RESEARCH, 1986, 1 (01) : 155 - 161
  • [25] Atomistic simulations of solid-phase epitaxial growth in silicon
    Bernstein, N
    Aziz, MJ
    Kaxiras, E
    PHYSICAL REVIEW B, 2000, 61 (10) : 6696 - 6700
  • [26] Atomistic examinations of the solid-phase epitaxial growth of silicon
    Gillespie, B. A.
    Wadley, H. N. G.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (11) : 3195 - 3203
  • [27] Solid-Phase Epitaxial Regrowth of Phosphorus Implanted Amorphized Germanium
    Simoen, E.
    Brugere, A.
    Satta, A.
    Van Daele, B.
    Brijs, B.
    Richard, O.
    Geypen, J.
    Meuris, M.
    Vandervorst, W.
    SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES, 2008, 16 (10): : 1031 - 1038
  • [28] Characterization of the solid-phase epitaxial growth of amorphized GaAs with in-situ electron microscopy
    Belay, KB
    Ridgway, MC
    Llewellyn, DJ
    COMPOUND SEMICONDUCTOR ELECTRONICS AND PHOTONICS, 1996, 421 : 221 - 226
  • [29] SOLID-PHASE EPITAXIAL PROCESSES IN IMPLANT-AMORPHIZED SEMICONDUCTORS
    SIGMON, TW
    PARKER, MA
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 280 - 284
  • [30] Electrical properties of solid-phase crystallized polycrystalline silicon films
    T. Watanabe
    H. Watakabe
    T. Sameshima
    M. Miyasaka
    Applied Physics A, 2003, 77 : 87 - 92
12345