Growth and characterization of hot-wall epitaxial InGaN films using mixed (Ga+In) source

被引：0

作者：

Chu, Shucheng ^{[1
]}

Saisho, Tetsuhiro ^{[1
]}

Fujimura, Kazuo ^{[2
]}

Sakakibara, Shingo ^{[3
]}

Tanoue, Fumiyasu ^{[3
]}

Ishino, Kenei ^{[1
]}

Ishida, Akihiro ^{[1
]}

Harima, Hiroshi ^{[4
]}

Oka, Yasuo ^{[5
]}

Takahiro, Katsumi ^{[6
]}

Chen, Yefan ^{[6
]}

Yao, Takafumi ^{[6
]}

Fujiyasu, Hiroshi ^{[1
]}

机构：

[1] Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan

[2] Susuki Corporation, Miyakoda Electronics Tech. Center, 1-1-2 Shinmiyakoda, Hamamatsu 431, Japan

[3] Yamaha Corporation, Iwata-gun, Shizuoka 438, Japan

[4] Department of Applied Physics, Osaka University, Yamadaoka, Suita, Osaka 565-0871, Japan

[5] Res. Inst. for Sci. Measurements, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

[6] Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 9 A期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：4973 / 4979

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