EPITAXIAL-GROWTH OF THIN GAAS-LAYERS BY HOT-WALL EPITAXY ON TRANSPARENT SUBSTRATES

被引：1
|
作者：
SADEGHI, M
SITTER, H
GRUBER, H
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1984年 / 70卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(84)90252-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：103 / 107
页数：5
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