Growth and characterization of 4H-SiC by horizontal hot-wall CVD

被引：0
|
作者：
Sun, GS [1 ]
Gao, X [1 ]
Wang, L [1 ]
Zhao, WS [1 ]
Zeng, YP [1 ]
Li, JM [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China
来源：
SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
4H-SiC layers have been homoepitaxially grown at 1500 degrees C with the use of a horizontal hot-wall chemical vapor deposition (CVD) system, which was built in the author's group. The typical growth rate was 2 mu m/h at a pressure of 40 Torr. The background donor concentration has been reduced to 2.3 x 10(15) cm(-3) during a prolonged growth run. It confirmed the idea that the high background concentration of thin films was caused by the impurities inside the susceptor and thermal insulator The FWHM of x-ray co-rocking curves show 9 similar to 15 aresecs in five different areas of a 32-mu m-thick 4H-SiC epilayer The free exciton peaks dominated in the near-band-edge low-temperature photoluminescence spectrum (LTPL), indicating high crystal quality.
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页码：89 / 92
页数：4
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