P-N JUNCTION DIODE CAPABLE OF WORKING AT 650 degree C.

被引：0
|
作者：
Anon
机构：
来源：
JEE. Journal of electronic engineering | 1988年 / 25卷 / 253期
关键词：
BAND STRUCTURE - CRYSTALS - Growing - SEMICONDUCTING DIAMONDS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The National Institute's semiconductor has been made possible by growing large crystals of cubic boron nitride (c-BN), which has the same crystal structure as diamond and shows similarities in hardness and thermal conductivity. The Institute succeeded not only in making c-BN, p and n semiconductors but also in producing a c-BN junction diode. The junction diode was successfully shown to operate at a high temperature of 650 degree C. The diode manufacturing process is described.
引用
收藏
页码：77 / 79
相关论文
共 50 条
  • [41] Fabrication of large-area silicon nanowire p-n junction diode arrays
    Peng, KQ
    Huang, ZP
    Zhu, J
    ADVANCED MATERIALS, 2004, 16 (01) : 73 - +
  • [42] Ultrafast Strain-Induced Electronic Transport in a GaAs p-n Junction Diode
    Moss, D. M.
    Akimov, A. V.
    Campion, R. P.
    Kent, A. J.
    CHINESE JOURNAL OF PHYSICS, 2011, 49 (01) : 499 - 505
  • [43] CdTe Diode Detectors with a p-n Junction Fonned by Laser-Induced Doping
    Gnatyuk, V. A.
    Aoki, T.
    Vlasenko, O. I.
    Levytskyi, S. N.
    2011 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC), 2011, : 4506 - 4509
  • [44] SELECTION OF OPERATING POINT OF SEMICONDUCTOR DIODE ON CURVE OF NONLINEAR CAPACITANCE OF P-N JUNCTION
    ROSHAL, AS
    RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1969, 14 (09): : 1486 - &
  • [45] Modeling of diffusion process in P-N junction diode using matrix rational approximation
    Tanji, Y
    PROCEEDINGS OF THE 2003 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL III: GENERAL & NONLINEAR CIRCUITS AND SYSTEMS, 2003, : 486 - 489
  • [46] Blackbody-like infrared radiation in stacked graphene P-N junction diode
    Murakami, N.
    Sugiyama, Y.
    Ohno, Y.
    Nagase, M.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 60 (SC)
  • [47] Theoretical study of the Y2-graphyne p-n junction diode devices
    Neshani, Sonay
    Ahmadi, Mohamad Taghi
    Golzan, Mir Maqsood
    PHYSICA B-CONDENSED MATTER, 2024, 688
  • [48] A Numerical Technique for Parameters extraction of a p-n Junction Diode in the Presence of Parasitic Resistance
    Tobji, R.
    Merheb, C.
    Georges, S.
    Mitri, G.
    2009 INTERNATIONAL CONFERENCE ON ADVANCES IN COMPUTATIONAL TOOLS FOR ENGINEERING APPLICATIONS, 2009, : 329 - 333
  • [49] P-N DIODE MEMORY CORRELATOR
    DEFRANOULD, P
    GAUTIER, H
    MAERFELD, C
    IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1977, 24 (02): : 119 - 119
  • [50] Chemically Doped Random Network Carbon Nanotube p-n Junction Diode for Rectifier
    Biswas, Chandan
    Lee, Si Young
    Thuc Hue Ly
    Ghosh, Arunabha
    Quoc Nguyen Dang
    Lee, Young Hee
    ACS NANO, 2011, 5 (12) : 9817 - 9823
12345