Fabrication of large-area silicon nanowire p-n junction diode arrays

被引：213
|
作者：
Peng, KQ [1 ]
Huang, ZP [1 ]
Zhu, J [1 ]
机构：
[1] Tsing Hua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
来源：
ADVANCED MATERIALS | 2004年 / 16卷 / 01期
关键词：
D O I：
10.1002/adma.200306185
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Large-area silicon nanowire p-n junction diode arrays (see Figure) have been fabricated by chemical etching of planar silicon p-n junction wafers in aqueous HF solution that contains appropriate amounts of silver nitrate near room temperature. The I-V characteristics have been measured using current-sensing atomic force microscopy, and nonlinear and rectifying electrical transport behavior has been observed.
引用
收藏
页码：73 / +
页数：5
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