A Numerical Technique for Parameters extraction of a p-n Junction Diode in the Presence of Parasitic Resistance

This paper proposes a numerical technique to extract the diode parameters and reverse saturation current by using the forward I-V characteristic, series and parallel parasitic resistances will also be determined. Using the p-n junction I-V characteristics (simulated or acquired) and defining an arbitrary set of predetermined parameters, the exponential I-V characteristics has been set linear (linearized). Using a specific numerical technique programmed with Mat lab over the linear representation allows the extraction of the p-n junction model parameters. To test the validity of this method, a Mat lab code has been developed to extract the Diode's parameters in order to be compared later with the diode real parameters. The accuracy of the results is represented through a figure of merit called Q. The lower the Q the more the accuracy. In other terms, the closer are the extracted parameters to real ones. The Matlab simulations showed that our results were ideal. In other words our I-V curve coincided with the theoretical one. Finally, the junction Band Gap is calculated to determine the intrinsic material used in pn junction diode.