P-N JUNCTION DIODE CAPABLE OF WORKING AT 650 degree C.

被引：0
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作者：
Anon
机构：
来源：
JEE. Journal of electronic engineering | 1988年 / 25卷 / 253期
关键词：
BAND STRUCTURE - CRYSTALS - Growing - SEMICONDUCTING DIAMONDS;
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学科分类号：
摘要：
The National Institute's semiconductor has been made possible by growing large crystals of cubic boron nitride (c-BN), which has the same crystal structure as diamond and shows similarities in hardness and thermal conductivity. The Institute succeeded not only in making c-BN, p and n semiconductors but also in producing a c-BN junction diode. The junction diode was successfully shown to operate at a high temperature of 650 degree C. The diode manufacturing process is described.
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页码：77 / 79
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