Etch rate acceleration of SiO2 during wet treatment after gate etching

被引：0

作者：

Tatsumi, Tetsuya ^{[1
]}

Fukuda, Seiichi ^{[1
]}

Kadomura, Shingo ^{[1
]}

机构：

[1] Sony Corp, Kanagawa, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 12 B期

关键词：

Atomic force microscopy - Binding energy - Disordering - Etch rate acceleration - Plasma treatment - Surface roughening - Thermal desorption spectroscopy - Wet treatment;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：6114 / 6118

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