Etch rate acceleration of SiO2 during wet treatment after gate etching

被引：0

作者：

Tatsumi, Tetsuya ^{[1
]}

Fukuda, Seiichi ^{[1
]}

Kadomura, Shingo ^{[1
]}

机构：

[1] Sony Corp, Kanagawa, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 12 B期

关键词：

Atomic force microscopy - Binding energy - Disordering - Etch rate acceleration - Plasma treatment - Surface roughening - Thermal desorption spectroscopy - Wet treatment;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：6114 / 6118

共 50 条

[21] RADIO-FREQUENCY BIASED MICROWAVE PLASMA-ETCHING TECHNIQUE - A METHOD TO INCREASE SIO2 ETCH RATE
SUZUKI, K
NINOMIYA, K
NISHIMATSU, S
OKUDAIRA, S
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1025 - 1034
[22] Analysis of fluorocarbon deposition during SiO2 etching
Maruyama, Takahiro
Fujiwara, Nobuo
Siozawa, Ken-itiro
Yoneda, Masahiro
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (4 B): : 2463 - 2467
[23] Analysis of fluorocarbon deposition during SiO2 etching
Maruyama, T
Fujiwara, N
Siozawa, K
Yoneda, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (4B): : 2463 - 2467
[24] Dependence of etch selectivity of SiO2 etching on the axial magnetic field added to ICP
Song, HY
Kim, CW
Park, SG
O, BH
Lee, SG
Lee, EH
Lee, JG
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 : S748 - S751
[25] Symmetric rate model for fluorocarbon plasma etching of SiO2
Ding, J
Hershkowitz, N
APPLIED PHYSICS LETTERS, 1996, 68 (12) : 1619 - 1621
[26] Wet and vapor etching of tracks produced in SiO2 by Ti ion irradiation
Bergamini, F.
Bianconi, M.
Cristiani, S.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 (1-2 SPEC. ISS.): : 593 - 596
[27] Presence and resistance to wet etching of silicon oxycarbides at the SiO2/SiC interface
Correa, Silma A.
Radtke, Claudio
Soares, Gabriel V.
Baumvol, Israel J. R.
Krug, Cristiano
Stedile, Fernanda C.
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (09) : H258 - H261
[28] Surface prefunctionalization of SiO2 to modify the etch per cycle during plasma-assisted atomic layer etching
Gasvoda, Ryan J.
Verstappen, Yuri G. P.
Wang, Scott
Hudson, Eric A.
Agarwal, Sumit
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2019, 37 (05):
[29] PULSED HIGH-RATE PLASMA-ETCHING WITH VARIABLE SI/SIO2 SELECTIVITY AND VARIABLE SI ETCH PROFILES
BOSWELL, RW
HENRY, D
APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1095 - 1097
[30] The form of etch rate minima in wet chemical anisotropic etching of silicon
Elwenspoek, M
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1996, 6 (04) : 405 - 409

← 1 2 3 4 5 →