Analysis of fluorocarbon deposition during SiO2 etching

被引：0
|
作者：
Maruyama, Takahiro [1 ]
Fujiwara, Nobuo [1 ]
Siozawa, Ken-itiro [1 ]
Yoneda, Masahiro [1 ]
机构：
[1] Mitsubishi Electric Corp, Hyogo, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1996年 / 35卷 / 4 B期
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页码：2463 / 2467
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