Etching of SiO2 and Si in fluorocarbon plasmas: A detailed surface model accounting for etching and deposition

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作者：
Gogolides, Evangelos
Vauvert, Philippe
Kokkoris, George
Turban, Guy
Boudouvis, Andreas G.
机构：
[1] Institute of Microelectronics, NCSR Demokritos, P.O. Box 60228, Aghia Paraskevi, Attiki 15310, Greece
[2] Department of Chemical Engineering, Natl. Technical University of Athens, Zographou Campus, Attiki 15780, Greece
[3] Institute des Materiaux de Nantes, CNRS-UMR-110, 2 rue de la Houssiniere, 44072 Nantes Cedex 03, France
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| 1600年 / American Institute of Physics Inc.卷 / 88期
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