Realistic etch yield of fluorocarbon ions in SiO2 etch process

被引：0
|
作者：
Hikosaka, Yukinobu [1 ,3 ]
Hayashi, Hisataka [1 ]
Sekine, Makoto [1 ]
Tsuboi, Hideo [2 ]
Endo, Mitsuhiro [2 ]
Mizutani, Naoki [2 ]
机构：
[1] Assoc. Super-Adv. Electronics T., 292 Yoshida, Totsuka, Yokohama, 244-0817, Japan
[2] ULVAC JAPAN, Ltd., 2500 Hagisono, Chigasaki, Kanagawa, 253-8543, Japan
[3] Device Development Div. Fujitsu Ltd., 4-2 Moriyama Nishine Kanegasaki-cho, Isawa-gun, Iwate 029-4593, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 7 B期
关键词：
D O I：
10.1143/jjap.38.4465
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：4465 / 4472
相关论文
共 50 条
  • [1] Realistic etch yield of fluorocarbon ions in SiO2 etch process
    Hikosaka, Y
    Hayashi, H
    Sekine, M
    Tsuboi, H
    Endo, M
    Mizutani, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (7B): : 4465 - 4472
  • [2] Ion bombardment energy and SiO2/Si fluorocarbon plasma etch selectivity
    Wang, SB
    Wendt, AE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (05): : 2425 - 2432
  • [3] Highly selective SiO2 etch employing inductively coupled hydro-fluorocarbon plasma chemistry for self aligned contact etch
    Iijima, Y
    Ishikawa, Y
    Yang, CL
    Chang, M
    Okano, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9A): : 5498 - 5501
  • [4] Highly selective SiO2 etch employing inductively coupled hydro-fluorocarbon plasma chemistry for self aligned contact etch
    Iijima, Yukio
    Ishikawa, Yoshio
    Yang, Chan-lon
    Chang, Mei
    Okano, Haruo
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (9 A): : 5498 - 5501
  • [5] Composition of ion flux and etch rates for Si and SiO2 in high density fluorocarbon plasmas
    Kirmse, K.H.R.
    Wendt, A.E.
    Breun, R.A.
    IEEE International Conference on Plasma Science, 1995,
  • [6] SiO2 Etch Rate Modification by Ion Implantation
    Bellandi, E.
    Soncini, V.
    ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES XI, 2013, 195 : 55 - 57
  • [7] Etch rate modification of SiO2 by ion damage
    Charavel, R
    Raskin, JP
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (07) : G245 - G247
  • [8] Use of SiO2 nanoparticles as etch mask to generate Si nanorods by reactive ion etch
    Liang, EZ
    Huang, CJ
    Lin, CF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (02): : 599 - 603
  • [9] SiO2 etch rate modification by ion implantation
    Bellandi, E.
    Soncini, V.
    THIN SOLID FILMS, 2012, 524 : 75 - 80
  • [10] THE INFLUENCE OF NH4F ON THE ETCH RATES OF UNDOPED SIO2 IN BUFFERED OXIDE ETCH
    PROKSCHE, H
    NAGORSEN, G
    ROSS, D
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (02) : 521 - 524
12345