Realistic etch yield of fluorocarbon ions in SiO2 etch process

被引：0

作者：

Hikosaka, Yukinobu ^{[1
,3
]}

Hayashi, Hisataka ^{[1
]}

Sekine, Makoto ^{[1
]}

Tsuboi, Hideo ^{[2
]}

Endo, Mitsuhiro ^{[2
]}

Mizutani, Naoki ^{[2
]}

机构：

[1] Assoc. Super-Adv. Electronics T., 292 Yoshida, Totsuka, Yokohama, 244-0817, Japan

[2] ULVAC JAPAN, Ltd., 2500 Hagisono, Chigasaki, Kanagawa, 253-8543, Japan

[3] Device Development Div. Fujitsu Ltd., 4-2 Moriyama Nishine Kanegasaki-cho, Isawa-gun, Iwate 029-4593, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 7 B期

关键词：

D O I：

10.1143/jjap.38.4465

中图分类号：

学科分类号：

摘要：

引用

页码：4465 / 4472

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