Etch rate acceleration of SiO2 during wet treatment after gate etching

被引：0
|
作者：
Tatsumi, Tetsuya [1 ]
Fukuda, Seiichi [1 ]
Kadomura, Shingo [1 ]
机构：
[1] Sony Corp, Kanagawa, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 12 B期
关键词：
Atomic force microscopy - Binding energy - Disordering - Etch rate acceleration - Plasma treatment - Surface roughening - Thermal desorption spectroscopy - Wet treatment;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
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页码：6114 / 6118
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