Reduction of plasma process-induced damage during gate poly etching by using a SiO2 hard mask

被引：2
|
作者：
Lee, HC [1 ]
Creusen, M [1 ]
Groeseneken, G [1 ]
Vanhaelemeersch, S [1 ]
机构：
[1] IMEC VZW, B-3001 Heverlee, Belgium
来源：
1998 3RD INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE | 1998年
关键词：
D O I：
10.1109/PPID.1998.725577
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页码：72 / 75
页数：4
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