Low density of gap states in a-Si:H deposited by vacuum UV direct photochemical vapor deposition method

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机构：

[1] Shirafuji, Tatsuru

[2] Yoshimoto, Masahiro

[3] Fuyuki, Takashi

[4] Matsunami, Hiroyuki

来源：

Shirafuji, Tatsuru | 1600年 / 30期

关键词：

Constant Photocurrent Method - Internal Photoemission Method - Localized States - Mobility Gap - Photochemical Vapor Deposition;

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[1] LOW-DENSITY OF GAP STATES IN A-SI-H DEPOSITED BY VACUUM UV DIRECT PHOTOCHEMICAL VAPOR-DEPOSITION METHOD
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FUYUKI, T
MATSUNAMI, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (4A): : L538 - L540
[2] Optical spectroscopy of the density of gap states in ETP-deposited a-Si:H
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[3] Density of states measurements in a-Si:H and a-Si:H/nc-Si:H multilayer structures prepared by hot wire chemical vapor deposition
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[4] Determination of the density of states distribution in the energy gap of a-Si:H
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[5] MEASUREMENT OF DENSITY OF THE GAP STATES IN a-Si:H BY THE NORMALIZATION OF PHOTOCONDUCTIVITY
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[6] High-intensity vacuum ultraviolet light source in windowless photochemical vapor deposition reactor and its application to a-Si:H deposition
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[7] Correlation between Si-H2 bond density and electron drift mobility in a-Si:H films prepared by photochemical vapor deposition
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[8] Photoelectric properties of a-Si:H with low gap-states deposited by VUV photo-CVD
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[9] CHARACTERISTICS FOR a-Si:H FILMS PREPARED BY MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR DEPOSITION.
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[10] Photoluminescence of a-Si:H films prepared by catalytic chemical vapor deposition method
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