Low density of gap states in a-Si:H deposited by vacuum UV direct photochemical vapor deposition method

被引：0

作者：

机构：

[1] Shirafuji, Tatsuru

[2] Yoshimoto, Masahiro

[3] Fuyuki, Takashi

[4] Matsunami, Hiroyuki

来源：

Shirafuji, Tatsuru | 1600年 / 30期

关键词：

Constant Photocurrent Method - Internal Photoemission Method - Localized States - Mobility Gap - Photochemical Vapor Deposition;

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引用

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