Low density of gap states in a-Si:H deposited by vacuum UV direct photochemical vapor deposition method

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[1] Shirafuji, Tatsuru
[2] Yoshimoto, Masahiro
[3] Fuyuki, Takashi
[4] Matsunami, Hiroyuki
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Shirafuji, Tatsuru | 1600年 / 30期
关键词：
Constant Photocurrent Method - Internal Photoemission Method - Localized States - Mobility Gap - Photochemical Vapor Deposition;
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