Low density of gap states in a-Si:H deposited by vacuum UV direct photochemical vapor deposition method

被引：0
|
作者：
机构：
[1] Shirafuji, Tatsuru
[2] Yoshimoto, Masahiro
[3] Fuyuki, Takashi
[4] Matsunami, Hiroyuki
来源：
Shirafuji, Tatsuru | 1600年 / 30期
关键词：
Constant Photocurrent Method - Internal Photoemission Method - Localized States - Mobility Gap - Photochemical Vapor Deposition;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Investigation of gap states in phosphorous-doped ultra-thin a-Si:H by near-UV photoelectron spectroscopy
    Korte, L.
    Schmidt, M.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) : 2138 - 2143
  • [32] Visible photoluminescence at room temperature from a-Si:H films grown by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition
    Joo, SJ
    Lim, SH
    Yoon, E
    Choi, WC
    Kim, EK
    Marra, DC
    Aydil, ES
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S1025 - S1028
  • [33] More stable low gap a-Si:H layers deposited by PE-CVD at moderately high temperature with hydrogen dilution
    Ziegler, Y
    Daudrix, V
    Droz, C
    Platz, R
    Wyrsch, N
    Shah, A
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 66 (1-4) : 413 - 419
  • [34] Influence of Si precursor type on the surface roughening of SiGe epitaxial layers deposited by ultrahigh vacuum chemical vapor deposition method
    Kim, Youngmo
    Yoon, Sungyeol
    Ko, Daehong
    Sohn, Hyunchul
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (04):
  • [35] DIRECT UV PHOTOENHANCED CHEMICAL VAPOR-DEPOSITION OF A-SI-H FROM DISILANE USING A DEUTERIUM LAMP
    BHATNAGAR, YK
    MILNE, WI
    THIN SOLID FILMS, 1988, 163 : 237 - 240
  • [36] Steady state defect density and annealing kinetics of light-induced defects in a-Si:H deposited from 'new' deposition techniques
    Osborne, IS
    Hata, N
    Matsuda, A
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 198 : 991 - 994
  • [37] Light emitting wide band gap a-Si:H deposited by microwave electron cyclotron resonance plasma-enhanced chemical vapour deposition
    Luterová, K
    Fojtík, P
    Poruba, A
    Dian, J
    Valenta, J
    Stuchlíková, H
    Stepánek, J
    Kocka, J
    Pelant, I
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 : 583 - 587
  • [38] Film quality in relation to deposition conditions of a-Si:H films deposited by the ''hot wire'' method using highly diluted silane
    Molenbroek, EC
    Mahan, AH
    Johnson, EJ
    Gallagher, AC
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (09) : 7278 - 7292
  • [39] CORRELATION BETWEEN SI-H2 BOND DENSITY AND ELECTRON-DRIFT MOBILITY IN A-SI-H FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION
    KAMIMURA, T
    NOZAKI, H
    SAKUMA, N
    ITO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (10): : L1803 - L1805
  • [40] IMPROVEMENT OF A-SI SOLAR-CELL FABRICATED BY MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITION USING H-2 DILUTION TECHNIQUE
    SIAMCHAI, P
    YAMADA, A
    KONAGAI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (11): : 6099 - 6104
12345