CHARACTERISTICS FOR a-Si:H FILMS PREPARED BY MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR DEPOSITION.

The density of states in a-Si:H, prepared by mercury-sensitized photo-CVD, was measured by the space-charge-limited current method. The density of Si dangling bonds (N//s) was measured by the electron spin resonance method. N//s and a minimum of the density-of-state near the Fermi level (N//m//i//n) indicated the same tendency versus substrate temperature, which showed a good correlation between N//s and N//m//i//n. Both N//s and N//m//i//n showed a minimum value near substrate temperature of 200 degree C. Photosensitivity reached more than 1 multiplied by 10**6 for the sample.