CHARACTERISTICS FOR a-Si:H FILMS PREPARED BY MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR DEPOSITION.

被引：0

作者：

Kamimura, Takaaki ^{[1
]}

Nozaki, Hidetoshi ^{[1
]}

机构：

[1] Toshiba Corp, Kawasaki, Jpn, Toshiba Corp, Kawasaki, Jpn

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1987年 / 26卷 / 10期

关键词：

FILMS - Chemical Vapor Deposition - HYDROGEN;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The density of states in a-Si:H, prepared by mercury-sensitized photo-CVD, was measured by the space-charge-limited current method. The density of Si dangling bonds (N//s) was measured by the electron spin resonance method. N//s and a minimum of the density-of-state near the Fermi level (N//m//i//n) indicated the same tendency versus substrate temperature, which showed a good correlation between N//s and N//m//i//n. Both N//s and N//m//i//n showed a minimum value near substrate temperature of 200 degree C. Photosensitivity reached more than 1 multiplied by 10**6 for the sample.

引用

页码：1573 / 1575

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