Current-voltage characteristics of a-Si:H film photodiodes prepared by mercury-sensitized photochemical vapor deposition

被引：0

作者：

Niiyama, Takako ^{[1
]}

Nozaki, Hidetoshi ^{[1
]}

机构：

[1] Toshiba Corp, Kawasaki, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1992年 / 31卷 / 9 A期

关键词：

Current voltage characteristics - Dark currents - Hydrogenated amorphous silicon - Space charge density - Space charge limited current;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：2673 / 2677

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[1] CURRENT-VOLTAGE CHARACTERISTICS OF A-SIH FILM PHOTODIODES PREPARED BY MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITION
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[2] CHARACTERISTICS FOR a-Si:H FILMS PREPARED BY MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR DEPOSITION.
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[3] CHARACTERISTICS FOR A-SI-H FILMS PREPARED BY MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITION
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[10] HIGH-EFFICIENCY AMORPHOUS ALLOY SOLAR-CELLS PREPARED BY MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITION OF DISILANE
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