Interdiffusion in InGaAs/GaAs and InGaAs/GaAsP quantum wells

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Ferdinand-Braun-Inst fuer, Hoechstfrequenztechnik Berlin, Berlin, Germany [1 ]
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Annealing - Auger electron spectroscopy - Encapsulation - Interdiffusion (solids) - Metallorganic vapor phase epitaxy - Photoluminescence - Semiconducting gallium compounds - Semiconducting indium compounds - Silica - Strain - Thermal effects - X ray diffraction analysis;
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