共 50 条
- [21] COMPARISON OF THE EFFECTS OF ION-IMPLANTATION INDUCED INTERDIFFUSION IN GAAS/ALGAAS AND INGAAS/GAAS SINGLE QUANTUM-WELLS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 747 - 750
- [23] InGaAs/GaAsP Quantum Wells and Wires for High-Efficiency Photovoltaic Applications 2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2016, : 519 - 520
- [26] Properties of InGaAs/GaAs quantum wells with a δ〈Mn〉-doped layer in GaAs Physics of the Solid State, 2007, 49 : 171 - 177
- [30] InGaAs/GaAs quantum dot interdiffusion induced by cap layer overgrowth MORPHOLOGICAL AND COMPOSITIONAL EVOLUTION OF HETEROEPITAXIAL SEMICONDUCTOR THIN FILMS, 2000, 618 : 179 - 184